Textured MoS2 thin films obtained on tungsten: Electrical properties of the W/MoS2 contact

Citation
E. Gourmelon et al., Textured MoS2 thin films obtained on tungsten: Electrical properties of the W/MoS2 contact, J APPL PHYS, 87(3), 2000, pp. 1182-1186
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
3
Year of publication
2000
Pages
1182 - 1186
Database
ISI
SICI code
0021-8979(20000201)87:3<1182:TMTFOO>2.0.ZU;2-F
Abstract
Textured films of molybdenum disulfide have been obtained by solid state re action between the constituents in thin films form when a (200) oriented tu ngsten sheet is used as substrate. The crystallites have their c axis perpe ndicular to the plane of the substrate. The annealing conditions are T = 10 73 K and t = 30 min. The films are stoichoimetric and p type. Such highly t extured films are achieved without foreign atom addition (Ni, Co...). It ap pears, as shown by x-ray photoelectron spectroscopy, that a thin WS2 layer is present at the interface W/MoS2. The crystallization process is discusse d by a van der Waals texturation (pseudoepitaxy) onto dangling bond sulfur terminated surfaces, these surfaces being ordered. After characterization o f the W/MoS2 structure by x-ray diffraction and x-ray photoelectron spectro scopy, an upper electrode of tungsten was deposited by sputtering. The elec trical properties of these W/MoS2/W structures have been investigated by an alyzing the behavior of the current-voltage characteristics as a function o f the measuring temperature. It is shown that an ohmic contact is obtained with a contact resistance smaller than the resistance of the MoS2 film. (C) 2000 American Institute of Physics. [S0021-8979(00)08103-2].