E. Gourmelon et al., Textured MoS2 thin films obtained on tungsten: Electrical properties of the W/MoS2 contact, J APPL PHYS, 87(3), 2000, pp. 1182-1186
Textured films of molybdenum disulfide have been obtained by solid state re
action between the constituents in thin films form when a (200) oriented tu
ngsten sheet is used as substrate. The crystallites have their c axis perpe
ndicular to the plane of the substrate. The annealing conditions are T = 10
73 K and t = 30 min. The films are stoichoimetric and p type. Such highly t
extured films are achieved without foreign atom addition (Ni, Co...). It ap
pears, as shown by x-ray photoelectron spectroscopy, that a thin WS2 layer
is present at the interface W/MoS2. The crystallization process is discusse
d by a van der Waals texturation (pseudoepitaxy) onto dangling bond sulfur
terminated surfaces, these surfaces being ordered. After characterization o
f the W/MoS2 structure by x-ray diffraction and x-ray photoelectron spectro
scopy, an upper electrode of tungsten was deposited by sputtering. The elec
trical properties of these W/MoS2/W structures have been investigated by an
alyzing the behavior of the current-voltage characteristics as a function o
f the measuring temperature. It is shown that an ohmic contact is obtained
with a contact resistance smaller than the resistance of the MoS2 film. (C)
2000 American Institute of Physics. [S0021-8979(00)08103-2].