Yk. Chang et al., Charge transfer and hybridization effects in Ni3Al and Ni3Ga studies by x-ray-absorption spectroscopy and theoretical calculations, J APPL PHYS, 87(3), 2000, pp. 1312-1317
This work investigates the charge transfer and Al(Ga) p-Ni d hybridization
effects in the intermetallic Ni3Al (Ni3Ga) alloy using the Ni L-3,L-2 and K
edge and Al (Ga) K x-ray absorption near edge structure (XANES) measuremen
ts. We find that the intensity of near-edge features at the Ni L-3 edge in
the Ni3Al (Ni3Ga) alloy decreased with respect to that of pure Ni, which im
plies a reduction of the number of unoccupied Ni 3d states and an enhanceme
nt of the Ni 3d state filling in the Ni3Al (Ni3Ga) alloy. Two clear feature
s are also observed in the Ni3Al (Ni3Ga) XANES spectrum at the Al (Ga) K ed
ge, which can be assigned to unoccupied Al 3p-(Ga 4p-) derived states in Ni
3Al (Ni3Ga). The threshold at the Al K-edge XANES for Ni3Al shifts towards
the higher photon energy relative to that of pure Al, suggesting that Al lo
ses some p-orbital charge upon forming Ni3Al. On the other hand, the Ni K e
dge shifts towards the lower photon energy in Ni3Al (Ni3Ga) relative to tha
t of pure Ni, suggesting a gain of charge at the Ni site. Thus both Al and
Ni K-edge XANES results imply a transfer of charge from Al 3p orbital to Ni
sites. Our theoretical calculations using the spin-polarized first-princip
les pseudofunction method agree with these results. (C) 2000 American Insti
tute of Physics. [S0021-8979(00)03603-3].