Hysteresis with nonequilibrium characteristics in sidegating effect of GaAs devices

Hysteresis was observed with nonequilibrium characteristics in the sidegate voltage dependence of drain current when measuring the threshold behavior of sidegating effect in GaAs metal-semiconductor field-effect transistors i n the voltage-controlled condition. Once the sidegate voltage is varied in a quasi-steady state, hysteresis disappears immediately. A new mechanism is presented to explain the phenomenon that hysteresis are related to electro n capture and emission from EL2 deep center on the substrate side of channe l-substrate junction. (C) 2000 American Institute of Physics. [S0021-8979(0 0)02001-6].