Photonic band gap airbridge microcavity resonances in GaAs/AlxOy waveguides

Citation
Dj. Ripin et al., Photonic band gap airbridge microcavity resonances in GaAs/AlxOy waveguides, J APPL PHYS, 87(3), 2000, pp. 1578-1580
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
3
Year of publication
2000
Pages
1578 - 1580
Database
ISI
SICI code
0021-8979(20000201)87:3<1578:PBGAMR>2.0.ZU;2-T
Abstract
Photonic band gap waveguide microcavities were designed, fabricated, and me asured in a high-dielectric-contrast GaAs/AlxOy III-V compound semiconducto r structure. The photonic crystal is defined by a regularly spaced one-dime nsional array of holes in the waveguide. By controlling the spacing between the two central holes, the microcavity is formed. The waveguide microcavit y is suspended in the airbridge geometry to further increase optical confin ement. Resonance states with cavity quality factors as high as 360 were mea sured at wavelengths near 1.55 mu m, with modal volumes as small as 0.026 m u m(3). (C) 2000 American Institute of Physics. [S0021-8979(00)06203-4].