Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors (vol 86, pg 4600, 1999)

Authors
Angelis, CT Dimitriadis, CA Miyasaka, M Farmakis, FV Kamarinos, G Brini, J Stoemenos, J
Citation
Ct. Angelis et al., Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors (vol 86, pg 4600, 1999), J APPL PHYS, 87(3), 2000, pp. 1588-1588
Citations number
1
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
3
Year of publication
2000
Pages
1588 - 1588
Database
ISI
SICI code
0021-8979(20000201)87:3<1588:EOELAO>2.0.ZU;2-P