BAND-GAP SHRINKAGE IN N-TYPE-DOPED CDO PROBED BY PHOTOEMISSION SPECTROSCOPY

Authors
DOU Y FISHLOCK T EGDELL RG LAW DSL BEAMSON G
Citation
Y. Dou et al., BAND-GAP SHRINKAGE IN N-TYPE-DOPED CDO PROBED BY PHOTOEMISSION SPECTROSCOPY, Physical review. B, Condensed matter, 55(20), 1997, pp. 13381-13384
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
55
Issue
20
Year of publication
1997
Pages
13381 - 13384
Database
ISI
SICI code
0163-1829(1997)55:20<13381:BSINCP>2.0.ZU;2-H
Abstract
The influence of n-type doping CdO with In or Y has been investigated by high-resolution ultraviolet and x-ray photoemission spectroscopy. I t is found that core levels and valence band features suffer a shift t o high binding energy due to doping. However this shift is less than t he change in the width of the occupied conduction band. This provides a direct measurement of band gap shrinkage as a result of doping in an oxide semiconductor.