PROBING THE SCHOTTKY-BARRIER WITH CONDUCTION ELECTRON-SPIN-RESONANCE

The Schottky barrier of a heavily doped Si layer covered with a metal film is investigated using conduction electron spin resonance, which i s utilized in situ in UHV to continuously monitor the metal overlayer development from a fractional monolayer through multiple layers. Measu red increases in linewidth are compared with calculations based on a k inetic theory. For Al and Ag, the data can be explained both by flat-s urface and island models, even though for Al only a flat-surface model with smooth surfaces is compatible with the experiments. In contrast, for Cu and Al-Cu bilayers, the data unambiguously favor the rough-sur face island model.