We report measurements of the rates of conversion from J=2 excitons to
J=1 excitons, as well as conversion from right-handed J=1 excitons to
left-handed J=1 excitons, and measurement of the intrinsic radiative
lifetime of J=1 excitons, in very-high-quality GaAs quantum wells. Sin
ce the experiments are performed at very low temperature and with reso
nant excitation, the effects of energy relaxation are absent.