OXIDATION PROCESS IN TITANIUM THIN-FILMS

Citation
I. Vaquila et al., OXIDATION PROCESS IN TITANIUM THIN-FILMS, Physical review. B, Condensed matter, 55(20), 1997, pp. 13925-13931
Citations number
31
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
55
Issue
20
Year of publication
1997
Pages
13925 - 13931
Database
ISI
SICI code
0163-1829(1997)55:20<13925:OPITT>2.0.ZU;2-R
Abstract
The first stages of the oxidation process of titanium thin films depos ited on top of Cu(100) substrates have been studied by means of Auger electron spectroscopy. Using principal component analysis we found dif ferent oxidation regimes for Ti films depending on their thickness. Wh ile for a film thickness up to 1 ML only one oxide phase (TiO2) is pre sent, in thicker films a new oxide phase (TiOx; x<2) is detected. As t he Ti film grows, the passivating effect of the titanium oxide stops t he process of oxygen adsorption. Finally, for the thickest films (>7 M L) the effect of the interface turns out to be negligible and the oxid ation characteristics of bulk titanium are recovered; i.e., only TiO2 is detected again.