Characterization of boron-incorporated zinc oxide film chemically preparedfrom an aqueous solution

Boron-incorporated ZnO film which had a wurtzite structure and showed optic al bandgap energy of 3.3 eV was prepared chemically onto a nonconductive su bstrate by immersing the substrate in an aqueous solution containing a zinc nitrate and dimethylamineborane (DMAB) at 333 K. Effects of the incorporat ed boron on the structural, optical, and electrical characteristics of ZnO film were investigated using X-ray diffraction, evaluation of surface morph ology with an atomic force microscope, measurements of optical transmission spectra,, and Hall measurement. Small amounts of boron atoms, which origin ated From the DMAB, were incorporated into ZnO grain and gave the lattice e xpansion. A pore-free ZnO film with a smooth surface was obtained from the 0.1 mol/L DMAB solution. The: ZnO film showed optical transmission as high as 80% in the visible light region and resistivity of 3.6 x 10(2)Omega cm w ith carrier concentration of 1.7 x 10(16) cm(-3) and mobility of 1.0 cm(2) V-1 s(-1). It was speculated that the incorporated boron atom acted as a do nor in the ZnO film. (C) 2000 The Electrochemical Society. S0013-4651(99)06 -088-7. All rights reserved.