Tk. Kundu et Jym. Lee, Thickness-dependent electrical properties of Pb(Zr, Ti)O-3 thin film capacitors for memory device applications, J ELCHEM SO, 147(1), 2000, pp. 326-329
Lead zirconate titanate [Pb(Zr0.53Ti0.47)O-3] films of thickness ranging fr
om 70 to 680 nm have been prepared by the radio-frequency sputtering techni
que. The current density-electric field (J-E characteristics of the films w
ere investigated. Films with thicknesses above 280 nm show a varistor-type
J-E characteristic. This behavior is due to the presence of highly resistiv
e grain boundaries and is termed a "grain boundary limited conduction mecha
nism". For films with thicknesses lower than 280 nm, trap-controlled space
charge limited current is dominant. In this case, the dominance of the deep
traps in the conduction mechanism has been confirmed from the temperature
dependence of the J-E behavior (C) 2000 The Electrochemical Society. S0013-
4651 (99)01-002-1. All rights reserved.