Double SIMOX structures formed by sequential high energy oxygen implantation into silicon

In this paper, the formation of novel Si/SiO2 multilayer structure using se paration by implantation of oxygen (SIMOX) technology is reported. The stru ctures were formed to investigate the suitability of SIMOX technology for t he formation of Si waveguiding structures. The method comprised two subsequ ent oxygen implants at 9 and 3.8 MeV and a final high temperature annealing step at 1300 degrees C for 12 h. Fourier transform infrared reflection spe ctroscopy, Rutherford backscattering spectroscopy/channelling analysis, cro ss-sectional transmission electron microscopy, and spreading resistance pro filing have been used to characterize the samples. Additionally, waveguidin g loss measurements have bt rn carried out. Interaction or transport of oxy gen between the two buried oxide layers is nor observed after the anneal an d so, it is concluded that the implantation and annealing schedule followed here can be safely used for the production of such multilayer structures. It is shown that fur 3.8 MeV O+ implantation into Si, a dose of 1 x 10(18) cm(-2) is adequate to form a continuous, highly resistive, buried layer, wh ile for the 9 MeV case, a higher close is necessary. Both Si layers qualify as waveguiding layers For infrared wavelengths (1.523 mu m). as they are o f hiph crystal quality. Waveguiding loss measurements give a high value of 20 dB/cm, indicating that the process needs further optimization. (C) 2000 The Electrochemical Society. S0013-4651(99)03-092-X. All rights reserved.