The changes of ceramics properties are influenced by a microstructure, name
ly grain size and grain boundary. Available silicon nitride ceramic powder
is usually covered with very thin silicon oxide layer. This silicon oxide i
s the origin of a glass film at grain boundaries. The purpose of this paper
is to produce the new SiAlON materials (Si6-ZAlZOZN8-Z) which were control
led glass film. SiAlONs (with Z = 1, 2, 3) were hot isostatically pressed (
HIPed) at 2273 K under an argon-gas pressure of 180 MPa using high-purity S
iAlON powders (Ube Industries). We can obtain SiAlON ceramics without glass
film at grain boundary. Microscopy studies revealed the presence of a 15R
SiAlON phase precipitated at the grain boundaries or triple-grain junctions
of Z = 2, 3 SiAlONs. Z = 1 SiAlON revealed presence of glass-SiO2 grain bo
undary structure in which a conspicuous amount of Al was found. The viscous
behavior of grain boundary at high temperature was studied by the internal
friction method. Internal friction data collected up to very high temperat
ures showed no grain boundary relaxation peak in the Z = 2, 3 SiAlON materi
als, and a relaxation peak centered at a rather low temperature in the Z =
1 SiAlON.