It was confirmed that the hydrogen plays an important role in the direct fo
rmation of nano-sized crystalline silicon (nc-Si) during the deposition of
amorphous silicon (a-Si) layers by electron cyclotron resonance chemical va
por deposition (ECR-CVD) on silicon and silicon-dioxide substrates. Two pho
toluminescence (PL) peaks, one at 680 nm and the other at 838 nm, were obse
rved at room temperature from the samples. With respect to the substrate te
mperature during the deposition process and the post-annealing temperature,
the relation between the hydrogen content and the intensities of the PL si
gnals was comparable. The results of Raman spectroscopy and FTIR measuremen
t show that the phase of the deposited films varied from nc-Si to a-Si with
increasing deposition temperature. That is, the crystalline phase changed
to the amorphous phase with decreasing hydrogen content.