Role of hydrogen in the photoluminescence and the formation of nanocrystalline silicon

Citation
Wc. Choi et al., Role of hydrogen in the photoluminescence and the formation of nanocrystalline silicon, J KOR PHYS, 36(1), 2000, pp. 23-28
Citations number
34
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
03744884 → ACNP
Volume
36
Issue
1
Year of publication
2000
Pages
23 - 28
Database
ISI
SICI code
0374-4884(200001)36:1<23:ROHITP>2.0.ZU;2-6
Abstract
It was confirmed that the hydrogen plays an important role in the direct fo rmation of nano-sized crystalline silicon (nc-Si) during the deposition of amorphous silicon (a-Si) layers by electron cyclotron resonance chemical va por deposition (ECR-CVD) on silicon and silicon-dioxide substrates. Two pho toluminescence (PL) peaks, one at 680 nm and the other at 838 nm, were obse rved at room temperature from the samples. With respect to the substrate te mperature during the deposition process and the post-annealing temperature, the relation between the hydrogen content and the intensities of the PL si gnals was comparable. The results of Raman spectroscopy and FTIR measuremen t show that the phase of the deposited films varied from nc-Si to a-Si with increasing deposition temperature. That is, the crystalline phase changed to the amorphous phase with decreasing hydrogen content.