ROOM-TEMPERATURE CONTINUOUS-WAVE PHOTOPUMPED OPERATION OF 1.22-MU-M GAINNAS GAAS SINGLE-QUANTUM-WELL VERTICAL-CAVITY SURFACE-EMITTING LASER/

Authors
LARSON MC KONDOW M KITATANI T YAZAWA Y OKAI M
Citation
Mc. Larson et al., ROOM-TEMPERATURE CONTINUOUS-WAVE PHOTOPUMPED OPERATION OF 1.22-MU-M GAINNAS GAAS SINGLE-QUANTUM-WELL VERTICAL-CAVITY SURFACE-EMITTING LASER/, Electronics Letters, 33(11), 1997, pp. 959-960
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
11
Year of publication
1997
Pages
959 - 960
Database
ISI
SICI code
0013-5194(1997)33:11<959:RCPOO1>2.0.ZU;2-7
Abstract
Photopumped operation of a vertical-cavity surface-emitting laser usin g a single GaInNAs/GaAs quantum well active layer is demonstrated for the first time. The device lases at continuous-wave at room temperatur e, with an active wavelength of 1.22 mu m and a threshold pump intensi ty of 3-5 kW/cm(2), for an equivalent current density of 2-3 kA/cm(2).