CONTINUOUS-WAVE OPERATION OF ZNSE-BASED LASER-DIODES HOMOEPITAXIALLY GROWN ON SEMIINSULATING ZNSE SUBSTRATES

Authors
OHKI A OHNO T MATSUOKA T ICHIMURA Y
Citation
A. Ohki et al., CONTINUOUS-WAVE OPERATION OF ZNSE-BASED LASER-DIODES HOMOEPITAXIALLY GROWN ON SEMIINSULATING ZNSE SUBSTRATES, Electronics Letters, 33(11), 1997, pp. 990-991
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
11
Year of publication
1997
Pages
990 - 991
Database
ISI
SICI code
0013-5194(1997)33:11<990:COOZLH>2.0.ZU;2-H
Abstract
Room temperature continuous-wave (CW) operation of a ZnSe-based blue-g reen laser diode, homo-epitaxially grown on semi-insulating ZnSe subst rates, has been achieved. The threshold current and operation voltage under a CW electrical bias were 84mA and 15V, respectively. Under a pu lsed electrical bias, lasing was achieved at up to 348K. The character istic temperature (T-0) was 140K between 253 and 318K.