Defect formation upon reactive direct-current magnetron sputtering of GeO2films

Defect formation upon reactive direct-current magnetron sputtering of GeO2 films has been studied using x-ray diffraction (XRD), scanning electron mic roscopy (SEM) with energy dispersive x-ray (EDX) analysis, as well as atomi c force microscopy and optical microscopy. The density of the defects shows a clear correlation with oxygen flow rate. High defect densities are obser ved for flow rates above approximately 27.5 seem, where a transition of fil m structure is observed. XRD analysis identifies the defects as Ge crystall ites. Defect formation is intimately related to the formation of whiskerlik e structures on the target in the vicinity of the erosion zone and arcing i n the same area. SEM imaging in conjunction with EDX allows a detailed unde rstanding of defect formation. (C) 2000 American Vacuum Society. [S0734-210 1(00)03901-4].