Citation
Zh. Yang et al., Surface photovoltage behavior of porous silicon modified with SO4 specimens, MATER CH PH, 63(2), 2000, pp. 167-169
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS CHEMISTRY AND PHYSICS
ISSN journal
02540584
→ ACNP
Volume
63
Issue
2
Year of publication
2000
Pages
167 - 169
Database
ISI
SICI code
0254-0584(20000228)63:2<167:SPBOPS>2.0.ZU;2-1
Abstract
SO4 specimens modified surfaces of p-type porous Si (PS) is generated by el
ectrochemical reactions of Si on surfaces with sulfuric acids in HF solutio
n, which result in considerable change in the photovoltage property of PS.
The reaction products at the porous Si surface are identified by Fourier-tr
ansform infrared (FTIR) spectroscopy, which implies that the interaction of
HSO41- or SO42- ions with unpaired electrons at the surface of silicon und
er electrochemical condition may be responsible for the surface modificatio
n of PS. (C) 2000 Elsevier Science S.A. All rights reserved.