The evolution of interstitial-type defects in silicon during platinum diffusion from 400 to 600 degrees C following 2-MeV electron irradiation

Platinum has been diffused into epitaxial n-type silicon for 30 min at temp eratures from 400 to 600 degrees C following room temperature irradiation w ith 2-MeV electrons at a dose of 1 x 10(17) e(-) cm(-2). Platinum has only been detected by deep level transient spectroscopy (DLTS) following the hig hest diffusion temperature. For lower temperatures defects, not previously reported. arise which are thought to be of interstitial nature. The two pri ncipal defect levels are determined to be located at 0.29 and 0.41 eV below the conduction band. The compensation for the two lowest diffusion tempera tures is observed to be extremely strong as manifested by a strong reductio n of the steady state reverse bias capacitance during the DLTS measurements . Following thermal treatment at 500 degrees C this capacitance, however, i ncreases. DLTS measurements down to 20 K detected thermal donors as well as a number of other defects not previously reported. Their signatures have b een determined by DLTS and TSCap (thermally stimulated capacitance) measure ments. The nature of the observed defects is discussed with reference to re cent results concerning interstitial defects. (C) 1999 Elsevier Science S.A . All rights reserved.