Citation
Gj. Chen et al., Magnetic and electrical properties of perovskite La1-xMnO3-delta films, MAT SCI E B, 68(2), 1999, pp. 104-110
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107
→ ACNP
Volume
68
Issue
2
Year of publication
1999
Pages
104 - 110
Database
ISI
SICI code
0921-5107(199912)68:2<104:MAEPOP>2.0.ZU;2-#
Abstract
The polycrystalline La1 - xMnO3 - delta films were grown on Si substrates b
y organometallic deposition (MOD) method. Self-grown alpha-SiO2 was used as
buffer layer. The magnetization, electrical resistivity and magnetoresista
nce of films were investigated at temperatures ranging from 5 to 298 K. All
La1 - xMnO3 - delta films showing insulator-metal (I - M) transitions exhi
bited semiconductor behavior for T > T-p. Magnetic property was strongly af
fected by experimental parameters. The MR variations were correlated to mic
rostructure. A low field MR of similar to 13% at 2 EOe was observed. (C) 19
99 Published by Elsevier Science S.A. All rights reserved.