Modular approach of a high current MOS compact model for circuit-level ESDsimulation including transient gate-coupling behaviour

A novel modular strategy for highly flexible modeling of ESD-capable MOS co mpact models is introduced. This high current MOS model comprises the impor tant gate-coupling effect and an approximated formulation for the avalanche multiplication factor. This enormously enhances the computation stability and performance of the model. An easy but accurate parameter extraction pro cedure based upon the model equations is described. Measurement and simulat ion of an application example employing the new ESD-model within a CMOS out put driver exhibit the relevance of dynamic gate-coupling for the ESD-relia bility of the circuit. (C) 2000 Elsevier Science Ltd. All rights reserved.