Broadband peaking techniques for HEMT-based monolithic transimpedance amplifiers

Citation
F. Giannini et al., Broadband peaking techniques for HEMT-based monolithic transimpedance amplifiers, MICROW OPT, 24(3), 2000, pp. 147-151
Citations number
12
Categorie Soggetti
Optics & Acoustics
Journal title
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
ISSN journal
08952477 → ACNP
Volume
24
Issue
3
Year of publication
2000
Pages
147 - 151
Database
ISI
SICI code
0895-2477(20000205)24:3<147:BPTFHM>2.0.ZU;2-D
Abstract
This paper describes the design and performances of a multigigabit optical front-end circuit. A new inductor-peaking technique has been applied to a G aAs MMIC transimpedance preamplifier realized in pseudomorphic HEMT technol ogy. The peaking circuit is capable of resonating the total input parasitic capacitance in a wide range of values: photodetector parasitic capacitance values between 0.1 and 0.8 pF allow -3 dB bandwidths from 5.2 to 7.2 GHz. Typical performances include a transimpedance gain of 57 dB circle dot Omeg a and an input-equivalent noise current density of about 7 pA/root Hz. Such an MMIC can be successfully adopted for optical receivers transmitting NRZ signals in excess of 7 Gbits/s. (C) 2000 John Wiley & Sons, Inc.