A silicon micromachined RF microswitch

Citation
K. Suzuki et al., A silicon micromachined RF microswitch, NEC RES DEV, 41(1), 2000, pp. 64-68
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
NEC RESEARCH & DEVELOPMENT
ISSN journal
0547051X → ACNP
Volume
41
Issue
1
Year of publication
2000
Pages
64 - 68
Database
ISI
SICI code
0547-051X(200001)41:1<64:ASMRM>2.0.ZU;2-O
Abstract
A mechanical microswitch for use in micro- or millimeter-waves has been fab ricated by single-crystal silicon bulk micromachining on a glass substrate. The mechanical part of the device has superior mechanical reliability and can be applied to a large-scale integrated circuit, since the glass substra te can be easily extended to a large area, accommodating a large number of elements on it. A fabricated device was measured to have 0.3 dB of on-state insertion loss and 14 dB of off-state isolation at 30 GHz.