Towards a durable InGaN MQW LD - Room temperature CW operation of InGaN MQW laser

Continuous-wave operation at room-temperature has been demonstrated for InG aN Multi-Quantum-Well (MQW) Laser Diodes (LDs) grown on FIELO (Facet-Initia ted Epitaxial Lateral Overgrowth) GaN substrates with a backside n-contact. This was made possible by introducing important new concept of reducing th reading dislocations (FIELO) during the growth of the GaN substrates. We fo und that InGaN active layers grown on FIELO GaN are superior to those grown on conventional sapphire substrates in terms of their growth mode and the resultant In compositional fluctuation. The fabricated laser diode shows in ternal quantum efficiency of as high as 98%.