Authors
Borer, K
Janos, S
Palmieri, VG
Dezillie, B
Li, Z
Collins, P
Niinikoski, TO
Lourenco, C
Sonderegger, P
Borchi, E
Bruzzi, M
Pirollo, S
Granata, V
Pagano, S
Chapuy, S
Dimcovski, Z
Grigoriev, E
Bell, W
Devine, SRH
O'Shea, V
Smith, K
Berglund, P
de Boer, W
Hauler, F
Heising, S
Jungermann, L
Casagrande, L
Cindro, V
Mikuz, M
Zavartanik, M
da Via, C
Esposito, A
Konorov, I
Paul, S
Schmitt, L
Buontempo, S
D'Ambrosio, N
Pagano, S
Ruggiero, G
Eremin, V
Verbitskaya, E
Citation
K. Borer et al., Charge collection efficiency of irradiated silicon detector operated at cryogenic temperatures, NUCL INST A, 440(1), 2000, pp. 5-16
Citations number
11
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002
→ ACNP
Volume
440
Issue
1
Year of publication
2000
Pages
5 - 16
Database
ISI
SICI code
0168-9002(20000121)440:1<5:CCEOIS>2.0.ZU;2-C
Abstract
The charge collection efficiency (CCE) of heavily irradiated silicon diode
detectors was investigated at temperatures between 77 and 200 K. The CCE wa
s found to depend on the radiation dose, bias voltage value and history, te
mperature, and bias current generated by light. The detector irradiated to
the highest fluence 2 x 10(15) n/cm(2) yields a MIP signal of at least 1500
0 e(-) both at 250 V forward bias voltage, and at 250 V reverse bias voltag
e in the presence of a light-generated current. The "Lazarus effect" was th
us shown to extend to fluences at least ten times higher than was previousl
y studied. (C) 2000 Elsevier Science B.V. All rights reserved.