An H plasma has a remarkable effect on dislocation mobility in silicon, red
ucing its activation energy to 1.2 eV. Applying density functional theory t
o the interactions of H and H? With the core of the 90 degrees partial disl
ocation in Si, we have identified a path for motion involving kink formatio
n and migration at hydrogenated core bonds which conforms exactly to the ex
perimentally measured activation energy.