Hydrogen interaction with dislocations in Si

Citation
Cp. Ewels et al., Hydrogen interaction with dislocations in Si, PHYS REV L, 84(4), 2000, pp. 690-693
Citations number
37
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
84
Issue
4
Year of publication
2000
Pages
690 - 693
Database
ISI
SICI code
0031-9007(20000124)84:4<690:HIWDIS>2.0.ZU;2-U
Abstract
An H plasma has a remarkable effect on dislocation mobility in silicon, red ucing its activation energy to 1.2 eV. Applying density functional theory t o the interactions of H and H? With the core of the 90 degrees partial disl ocation in Si, we have identified a path for motion involving kink formatio n and migration at hydrogenated core bonds which conforms exactly to the ex perimentally measured activation energy.