Charge-density-ware current conversion in submicron NbSe3 wires

Citation
Oc. Mantel et al., Charge-density-ware current conversion in submicron NbSe3 wires, PHYS REV L, 84(3), 2000, pp. 538-541
Citations number
22
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
84
Issue
3
Year of publication
2000
Pages
538 - 541
Database
ISI
SICI code
0031-9007(20000117)84:3<538:CCCISN>2.0.ZU;2-U
Abstract
We have studied the charge-density-wave (CDW) current conversion process in NbSe3 wire structures of mesoscopic dimensions. A significant reduction of the phase-slip voltage associated with this conversion is observed if the spacing between current contacts is smaller than a few mu m. This reduction cannot be explained with existing models of CDW current conversion. We sug gest that single phase-slip events play a central role in micron-sized syst ems. The removal and addition of wave fronts may then become correlated in time. PACS numbers: 72.15.Nj, 71.45.Lr, 73.23.-b.