Quantum-critical conductivity scaling for a metal-insulator transition

Citation
Hl. Lee et al., Quantum-critical conductivity scaling for a metal-insulator transition, SCIENCE, 287(5453), 2000, pp. 633-636
Citations number
17
Categorie Soggetti
Multidisciplinary,Multidisciplinary,Multidisciplinary
Journal title
SCIENCE
ISSN journal
00368075 → ACNP
Volume
287
Issue
5453
Year of publication
2000
Pages
633 - 636
Database
ISI
SICI code
0036-8075(20000128)287:5453<633:QCSFAM>2.0.ZU;2-U
Abstract
Temperature (T)- and frequency (omega)-dependent conductivity measurements are reported here in amorphous niobium-silicon alloys with compositions (x) near the zero-temperature metal-insulator transition. There is a one-to-on e correspondence between the frequency- and temperature-dependent conductiv ity on both sides of the critical concentration, thus establishing the quan tum-critical nature of the transition. The analysis of the conductivity lea ds to a universal scaling function and establishes the critical exponents. This scaling can be described by an x-, T-, and omega-dependent characteris tic length, the form of which is derived by experiment.