In-depth characterisation of electrical carrier activation in Zn+-implanted and laser annealed InP

Authors
Dinia, A Zollo, G Pizzuto, C Vitali, G Kalitzova, M
Citation
A. Dinia et al., In-depth characterisation of electrical carrier activation in Zn+-implanted and laser annealed InP, SOL ST COMM, 113(7), 2000, pp. 385-388
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
113
Issue
7
Year of publication
2000
Pages
385 - 388
Database
ISI
SICI code
0038-1098(2000)113:7<385:ICOECA>2.0.ZU;2-O
Abstract
Low-power pulsed-laser annealing has been applied to Zn+-implanted InP samp les in N-2 atmosphere, attaining structural reordering and high electrical activation. The in-depth hole carrier concentration distribution has been c ompared with the in-depth implanted Zn distribution: a [Zn] plateau appears where the activation is about 100%. (C) 2000 Elsevier Science Ltd. All rig hts reserved.