Randomness of the magnetic ion distribution in dilute magnetic semiconductor epilayers grown by molecular beam epitaxy

Citation
H. Bednarski et al., Randomness of the magnetic ion distribution in dilute magnetic semiconductor epilayers grown by molecular beam epitaxy, SOL ST COMM, 113(7), 2000, pp. 419-422
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
113
Issue
7
Year of publication
2000
Pages
419 - 422
Database
ISI
SICI code
0038-1098(2000)113:7<419:ROTMID>2.0.ZU;2-P
Abstract
We have applied our extended generalized pair approximation to dilute magne tic semiconductor epilayers grown by molecular beam epitaxy and in this pap er we have compared our calculations of the heavy-hole exciton Zeeman split ting with those we measured on Zn1-xMnxSe and those measured by other autho rs on Cd1-xMnxTe epilayers. It appears that there can be found experimental results, including ours, which exhibit a systematic tendency to lie well b elow the corresponding theoretical curves based on random distribution. We can clearly attribute this reduced paramagnetic behavior to a non-random di stribution of the magnetic ions and we present a way to determine the degre e of non-random distribution. (C) 2000 Elsevier Science Ltd. All rights res erved.