Mesh related problems in device simulation: Treatments of meshing noise and leakage current

Authors
Shigyo, N Tanimoto, H Enda, T
Citation
N. Shigyo et al., Mesh related problems in device simulation: Treatments of meshing noise and leakage current, SOL ST ELEC, 44(1), 2000, pp. 11-16
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
1
Year of publication
2000
Pages
11 - 16
Database
ISI
SICI code
0038-1101(200001)44:1<11:MRPIDS>2.0.ZU;2-Q
Abstract
Technology CAD (TCAD) becomes more important, because of an increase in a c omplexity of VLSI design. However, TCAD still requires further improvements from the practical point of view. This paper describes new mesh related pr oblems in a device simulation; a meshing noise and a leakage current proble ms. (C) 2000 Elsevier Science Ltd. All rights reserved.