Low frequency noise behaviour of InP/InGaAs heterojunction bipolar waveguide phototransistors

Authors
Borgarino, M Plana, R Fendler, M Vilcot, JP Mollot, F Barette, J Decoster, D Graffeuil, J
Citation
M. Borgarino et al., Low frequency noise behaviour of InP/InGaAs heterojunction bipolar waveguide phototransistors, SOL ST ELEC, 44(1), 2000, pp. 59-62
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
1
Year of publication
2000
Pages
59 - 62
Database
ISI
SICI code
0038-1101(200001)44:1<59:LFNBOI>2.0.ZU;2-B
Abstract
In this paper we report on both the DC and low frequency noise (LFN) proper ties of InP/InGaAs heterojunction bipolar phototransistors (HPTs) featuring waveguide type illumination. Both DC and LFN measurements demonstrate the good quality of these devices. In particular, they exhibit a 1/f noise figure-of-merit of 2.10(-8) mu m(2 ), which is exceptionally very good in the field of the compound semiconduc tor HBTs, where values around 10(-7) mu m(2) are usually reported. (C) 2000 Elsevier Science Ltd. Ail rights reserved.