The negatively charged insulator-semiconductor structure: concepts, technological considerations and applications

The use of possibly uncharged and therefore passivated Insulator-Semiconduc tor structures (IS-structures) in conventional semiconductor devices as MIS FETs is well known and has been an issue of many research papers. For drift field generation IS structures with a fixed positive interface charge in t he insulator were developed in the 80 s and employed mainly as a part of fi eld effect solar cells. While there has been a large number of publications about the positively biased IS structure there has been very little intere st in its antipolar counterpart - the negatively biased IS structure - so f ar. In this paper we introduce theoretical considerations and qualitative m odels how such a structure would look and work like. Furthermore we conside r technological aspects of producing a negatively biased IS structure. Poss ible applications are discussed as well.(C) 2000 Elsevier Science Ltd. All rights reserved.