D. Konig et G. Ebest, The negatively charged insulator-semiconductor structure: concepts, technological considerations and applications, SOL ST ELEC, 44(1), 2000, pp. 111-116
The use of possibly uncharged and therefore passivated Insulator-Semiconduc
tor structures (IS-structures) in conventional semiconductor devices as MIS
FETs is well known and has been an issue of many research papers. For drift
field generation IS structures with a fixed positive interface charge in t
he insulator were developed in the 80 s and employed mainly as a part of fi
eld effect solar cells. While there has been a large number of publications
about the positively biased IS structure there has been very little intere
st in its antipolar counterpart - the negatively biased IS structure - so f
ar. In this paper we introduce theoretical considerations and qualitative m
odels how such a structure would look and work like. Furthermore we conside
r technological aspects of producing a negatively biased IS structure. Poss
ible applications are discussed as well.(C) 2000 Elsevier Science Ltd. All
rights reserved.