Citation
Cs. Ho et al., An analytical MOSFET breakdown model including self-heating effect, SOL ST ELEC, 44(1), 2000, pp. 125-131
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101
→ ACNP
Volume
44
Issue
1
Year of publication
2000
Pages
125 - 131
Database
ISI
SICI code
0038-1101(200001)44:1<125:AAMBMI>2.0.ZU;2-D
Abstract
This paper presents an analytical breakdown model including self-heating ef
fect (SHE) for NMOSFEF devices. Model evaluation is taken for a wide ambien
t temperature range, from room temperature to 200 degrees C, It is found th
at the device self-heating effect is suppressed when ambient temperature is
increased, in addition, our results suggest that the conventional MOSFET b
reakdown model without considering the self-heating effect call overestimat
e the breakdown characteristics for the short-channel devices. (C) 2000 Els
evier Science Ltd. All rights reserved.