M. Zhou et al., Annealing effects on the structure and mechanical properties of r.f.-sputtered Cr-B hard thin films, THIN SOL FI, 359(2), 2000, pp. 165-170
Cr-B thin films were synthesized by an r.f. plasma-assisted magnetron sputt
ering method using pure CrB2 target on quartz glass, glass ceramic, NaCl si
ngle crystal and silicon wafer substrates. After the sputtering process, th
e as-deposited Cr-B thin films were annealed at 773, 973 and 1173 K for 5 h
. The influence of annealing temperature on the structure and properties of
Cr-B thin films was investigated, Although the films were deposited at low
temperature (T-S/T-M < 0.1) in this study, X-ray diffraction and transmiss
ion electron microscopy observation results indicate that fine crystalline
grains are still formed in these films. With increasing annealing temperatu
re, the grain size increased gradually from 10 to 30 nm. The compressive st
ress in the Cr-B films is rather small due to the long target-substrate dis
tance of this apparatus which reduces the atomic peening effect. The hardne
ss decreased scarcely with increasing annealing temperature from about 21 G
Pa for as deposited to about 19 GPa for 1173 K owing to the grain growth an
d relaxation of residual stress. The present study shows that Cr-B thin fil
ms can be used below 1200 K with stable structure and high hardness. (C) 20
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