EVIDENCE OF ANNEALING EFFECTS ON A HIGH-DENSITY SI SIO2 INTERFACIAL LAYER/

Authors
KOSOWSKY SD PERSHAN PS KRISCH KS BEVK J GREEN ML BRASEN D FELDMAN LC ROY PK
Citation
Sd. Kosowsky et al., EVIDENCE OF ANNEALING EFFECTS ON A HIGH-DENSITY SI SIO2 INTERFACIAL LAYER/, Applied physics letters, 70(23), 1997, pp. 3119-3121
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
23
Year of publication
1997
Pages
3119 - 3121
Database
ISI
SICI code
0003-6951(1997)70:23<3119:EOAEOA>2.0.ZU;2-3
Abstract
Thermally grown Si(001)/SiO2 samples were studied by x-ray reflectivit y. Fits of model electron density profiles to the data reveal the exis tence of an interfacial layer at the Si/SiO2 interface up to 15-Angstr om-thick, with density higher than either the crystalline Si or the ma in oxide layer. This density of the layer is reduced by a postoxidatio n anneal. (C) 1997 American Institute of Physics.