TEMPERATURE-DEPENDENCE OF THE PHOTOQUENCHING OF EL2 IN SEMIINSULATINGGAAS

Authors
ALVAREZ A JIMENEZ J GONZALEZ MA SANZ LF
Citation
A. Alvarez et al., TEMPERATURE-DEPENDENCE OF THE PHOTOQUENCHING OF EL2 IN SEMIINSULATINGGAAS, Applied physics letters, 70(23), 1997, pp. 3131-3133
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
23
Year of publication
1997
Pages
3131 - 3133
Database
ISI
SICI code
0003-6951(1997)70:23<3131:TOTPOE>2.0.ZU;2-0
Abstract
A model of the temperature behavior of the photoquenching of EL2 in se mi-insulating GaAs is presented. The thermal emission of a hole trappe d on an actuator level accounts for the very low photoquenching effici ency above 85 K. This effect is presented in terms of a set of rate eq uations that reproduce in a reliable way the temperature dependence of the photoquenching of EL2. The activation energy of the actuator leve l suggests a hole trap level other than Ga-As as was previously assume d. (C) 1997 American Institute of Physics.