THE ORIGIN OF GALLIUM DESORPTION TRANSIENTS DURING ALGAAS GAAS HETEROINTERFACE FORMATION BY MOLECULAR-BEAM EPITAXY/

Authors
MAHALINGAM K DORSEY DL EVANS KR VENKAT R
Citation
K. Mahalingam et al., THE ORIGIN OF GALLIUM DESORPTION TRANSIENTS DURING ALGAAS GAAS HETEROINTERFACE FORMATION BY MOLECULAR-BEAM EPITAXY/, Applied physics letters, 70(23), 1997, pp. 3143-3145
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
23
Year of publication
1997
Pages
3143 - 3145
Database
ISI
SICI code
0003-6951(1997)70:23<3143:TOOGDT>2.0.ZU;2-U
Abstract
A Monte Carlo simulation study is performed to investigate the Ga deso rption behavior at AlGaAs/GaAs heterointerfaces during growth by molec ular beam epitaxy. The transients in Ga desorption rate upon opening/c losing the Al shutter arise due to both the change in V/III flux ratio and the Al-Ga surface exchange mechanism. It is shown that the desire d ''steplike'' variation in Ga desorption rate at each interface can b e attained by a growth procedure employing a constant V/III flux ratio . (C) 1997 American Institute of Physics.