ENHANCED ARSENIC EXCESS IN LOW-TEMPERATURE-GROWN GAAS DUE TO INDIUM DOPING

Authors
BERT NA CHALDYSHEV VV KUNITSYN AE MUSIKHIN YG FALEEV NN TRETYAKOV VV PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation
Na. Bert et al., ENHANCED ARSENIC EXCESS IN LOW-TEMPERATURE-GROWN GAAS DUE TO INDIUM DOPING, Applied physics letters, 70(23), 1997, pp. 3146-3148
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
23
Year of publication
1997
Pages
3146 - 3148
Database
ISI
SICI code
0003-6951(1997)70:23<3146:EAEILG>2.0.ZU;2-8
Abstract
We have found that isovalent indium doping enhances arsenic excess in GaAs films grown by molecular beam epitaxy at low temperature. An incr ease in lattice expansion and near infrared optical absorption, as wel l as higher density of As clusters, have been observed in the indium-d oped films when compared to the conventional indium-free ones. (C) 199 7 American Institute of Physics.