First-principles study of NH3 exposed Si(001)2x1: Relation between N 1s core-level shifts and atomic structure

Citation
Gm. Rignanese et A. Pasquarello, First-principles study of NH3 exposed Si(001)2x1: Relation between N 1s core-level shifts and atomic structure, APPL PHYS L, 76(5), 2000, pp. 553-555
Citations number
30
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
5
Year of publication
2000
Pages
553 - 555
Database
ISI
SICI code
0003-6951(20000131)76:5<553:FSONES>2.0.ZU;2-R
Abstract
Using a first-principles approach, we assign N 1s core-level shifts at ammo nium exposed Si(001)2x1 surfaces to definite bonding configurations of N at oms. Model structures are obtained by fully relaxing the atomic positions o f N atoms in different bonding configurations. Calculated values of N 1s co re-level shifts of N-Si-3, N-Si2H, and N-SiH2 structural units show a linea r dependence on the number of nearest-neighbor H atoms, in good agreement w ith data from photoemission experiments. Our results support the picture in which NH3 is adsorbed dissociatively as NH2 and H. (C) 2000 American Insti tute of Physics. [S0003-6951(00)00305-3].