Citation
F. Heinrichsdorff et al., High-power quantum-dot lasers at 1100 nm, APPL PHYS L, 76(5), 2000, pp. 556-558
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951
→ ACNP
Volume
76
Issue
5
Year of publication
2000
Pages
556 - 558
Database
ISI
SICI code
0003-6951(20000131)76:5<556:HQLA1N>2.0.ZU;2-O
Abstract
High-power semiconductor laser diodes based on multiple InGaAs/GaAs quantum
-dot layers grown by metal-organic chemical-vapor deposition are demonstrat
ed. The devices exhibit a peak power of 3 W (4.5 W) at 1100 nm (1068 nm), r
espectively, during pulsed operation at room temperature and show slope eff
iciencies of 57% (66%). (C) 2000 American Institute of Physics. [S0003-6951
(00)01205-5].