A full-band Monte Carlo model for the temperature dependence of electron and hole transport in silicon

A full-band Monte Carlo transport model for silicon is presented that achie ves excellent quantitative agreement with the temperature, field, and cryst al direction dependences of experimental electron and hole drift velocities from 20 to 500 K. The model is based on wave-vector-dependent phonon scatt ering rates, for which a unique set of only two empirical deformation poten tials for each carrier type has been determined from the experiments. Numer ical accuracy is obtained by a variable Brillouin zone discretization. We d iscuss discrepancies between different experimental low-field electron mobi lities at 77 K showing that the value should be 26 100 cm(2)/(V s) instead of the often quoted 20 800 cm(2)/(V s). For holes, we show that the inclusi on of inelastic intravalley acoustic phonons cannot be restricted to low te mperatures, but is essential for a correct transport description even at ro om temperature. (C) 2000 American Institute of Physics. [S0003-6951(00)0410 5-X].