Microdisk light-emitting diodes (mu-LEDs) with diameter of about 12 mu m ha
ve been fabricated from InGaN/GaN quantum wells. Photolithographic patterni
ng and inductively coupled plasma dry etching have been employed to fabrica
te these mu-LED devices. Device characteristics, such as the current-voltag
e characteristics, light output power, and electroluminescence (EL) spectra
have been measured and compared with those of conventional broad-area LEDs
. Our results showed that, for an identical area, the quantum efficiencies
of mu-LED are enhanced over the conventional broad-area LEDs due to an enha
nced current density and possibly microsize effects. The implications of ou
r results on the design of future UV/blue microoptoelectronic devices are d
iscussed. (C) 2000 American Institute of Physics. [S0003-6951(00)03805-5].