GaN microdisk light emitting diodes

Citation
Sx. Jin et al., GaN microdisk light emitting diodes, APPL PHYS L, 76(5), 2000, pp. 631-633
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
5
Year of publication
2000
Pages
631 - 633
Database
ISI
SICI code
0003-6951(20000131)76:5<631:GMLED>2.0.ZU;2-9
Abstract
Microdisk light-emitting diodes (mu-LEDs) with diameter of about 12 mu m ha ve been fabricated from InGaN/GaN quantum wells. Photolithographic patterni ng and inductively coupled plasma dry etching have been employed to fabrica te these mu-LED devices. Device characteristics, such as the current-voltag e characteristics, light output power, and electroluminescence (EL) spectra have been measured and compared with those of conventional broad-area LEDs . Our results showed that, for an identical area, the quantum efficiencies of mu-LED are enhanced over the conventional broad-area LEDs due to an enha nced current density and possibly microsize effects. The implications of ou r results on the design of future UV/blue microoptoelectronic devices are d iscussed. (C) 2000 American Institute of Physics. [S0003-6951(00)03805-5].