ELECTRONIC-STRUCTURE OF AMORPHOUS SEMICONDUCTING ALLOYS

Authors
YNDURAIN F ORDEJON P
Citation
F. Yndurain et P. Ordejon, ELECTRONIC-STRUCTURE OF AMORPHOUS SEMICONDUCTING ALLOYS, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 70(3), 1994, pp. 535-546
Citations number
20
Categorie Soggetti
Physics, Applied
Journal title
Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties → ACNP
ISSN journal
09586644
Volume
70
Issue
3
Year of publication
1994
Pages
535 - 546
Database
ISI
SICI code
0958-6644(1994)70:3<535:EOASA>2.0.ZU;2-A
Abstract
We present results of ab initio calculations of the geometrical and el ectronic structure of various amorphous silicon-based semiconducting a lloys. The electronic structures of the compounds a-SiO(x), a-SiN(x), a-SiN(x)H(y) and a-SiO(x)N(y) are calculated and discussed in detail. The photoemission response as well as the optical absorption spectra a re calculated and compared with the available experimental data.