The laser induced fluorescence of the HSiCl radical, detected in the 525-60
0 nm range, has been observed in the photolysis of 2-chloroethenylsilane at
193 and 212 nm. The results indicate that this radical is produced with co
nsiderable rotational and vibrational excitation in the electronic ground s
tate. Quenching with Argon of the excited electronic state A(1)A" is very s
low, on the order of 8 x 10(-13) cm(3) molecule(-1) s(-1). The implications
of these observations for the primary photofragmentation paths of the 2-ch
loroethenylsilane molecule are discussed. (C) 2000 Elsevier Science B.V. Al
l rights reserved.