RADIATION HARDNESS OF SILICON DETECTORS MANUFACTURED ON WAFERS FROM VARIOUS SOURCES

Authors
DEZILLIE B BATES S GLASER M LEMEILLEUR F LEROY C
Citation
B. Dezillie et al., RADIATION HARDNESS OF SILICON DETECTORS MANUFACTURED ON WAFERS FROM VARIOUS SOURCES, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 388(3), 1997, pp. 314-317
Citations number
5
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
388
Issue
3
Year of publication
1997
Pages
314 - 317
Database
ISI
SICI code
0168-9002(1997)388:3<314:RHOSDM>2.0.ZU;2-#
Abstract
Impurity concentrations in the initial silicon material are expected t o play an important role for the radiation hardness of silicon detecto rs, during their irradiation and for their evolution with time after i rradiation. This work reports on the experimental results obtained wit h detectors manufactured using various float-zone (FZ) and epitaxial-g rown material. Preliminary results comparing the changes in leakage cu rrent and full depiction voltage of FZ and epitaxial detectors as a fu nction of fluence and of time after 10(14) cm(-2) proton irradiation a re given. The measurement of charge collection efficiency for epitaxia l detectors is also presented.