ANALYSIS OF TSC SPECTRA MEASURED ON SILICON PAD DETECTORS AFTER EXPOSURE TO FAST-NEUTRONS

Authors
FEICK H FRETWURST E HEYDARPOOR P LINDSTROM G MOLL M
Citation
H. Feick et al., ANALYSIS OF TSC SPECTRA MEASURED ON SILICON PAD DETECTORS AFTER EXPOSURE TO FAST-NEUTRONS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 388(3), 1997, pp. 323-329
Citations number
20
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
388
Issue
3
Year of publication
1997
Pages
323 - 329
Database
ISI
SICI code
0168-9002(1997)388:3<323:AOTSMO>2.0.ZU;2-A
Abstract
We present thermally stimulated current (TSC) spectra measured on asym metric p-n-junctions fabricated from detector grade silicon. A multitu de of characteristic deep levels generated by fast neutron-induced dam age with fluences ranging from 10(12) to 10(14) cm(-2) were observed. The TSC spectra were found to depend strongly on both the filling cond itions and the electric field strength in the device. The filling of t he deep levels has been investigated in detail by varying the current, temperature, and duration of the free carrier injection pulse. The co rresponding observations in conjunction with a delayed heating analysi s allow a tentative identification of the complex defects VOi, CiOi, C iCs, and the divacancy VV.