COMPARISON OF DEFECTS PRODUCED BY FAST-NEUTRONS AND CO-60-GAMMAS IN HIGH-RESISTIVITY SILICON DETECTORS USING DEEP-LEVEL TRANSIENT SPECTROSCOPY

Measurements of radiation-induced defects in high-resistivity silicon detectors irradiated with 14.1 MeV neutrons and Co-60-gammas have been performed using the Deep-Level Transient Spectroscopy technique (DLTS ). Five electron traps and one hole trap were found in both neutron- a nd gamma-irradiated samples differing only in the relative defect conc entrations. Furthermore, two additional levels were only detected in t he neutron irradiated detectors, The observed defects are identified b y comparing the measured energy levels, capture cross sections, and in troduction rates to those known from literature. In addition, these as signments are supported by the annealing behaviour observed in two neu tron-irradiated samples during a short-term annealing at room temperat ure and an isochronal heat treatment. The differences found between th e defect production by fast neutrons and Co-60-gammas are discussed.