Device benchmark comparisons via kinetic, hydrodynamic, and high-field models

Authors
Cercignani, C Gamba, IM Jerome, JW Shu, CW
Citation
C. Cercignani et al., Device benchmark comparisons via kinetic, hydrodynamic, and high-field models, COMPUT METH, 181(4), 2000, pp. 381-392
Citations number
13
Categorie Soggetti
Mechanical Engineering
Journal title
COMPUTER METHODS IN APPLIED MECHANICS AND ENGINEERING
ISSN journal
00457825 → ACNP
Volume
181
Issue
4
Year of publication
2000
Pages
381 - 392
Database
ISI
SICI code
0045-7825(20000121)181:4<381:DBCVKH>2.0.ZU;2-4
Abstract
This paper describes benchmark comparisons for a GaAs n(+) - n - n(+) diode . A global kinetic model is simulated, and compared with various realizatio ns of the hydrodynamic model, depending on mobility calibration. Finally, t he channel region alone is simulated, with interior boundary conditions der ived from the kinetic model, by use of the high-field (augmented drift-diff usion) model. (C) 2000 Elsevier Science S.A. All rights reserved.