THE INFLUENCE OF THE PRELIMINARY ION-IMPLANTATION IN THE ZNSE ON THE PROPERTIES OF THE ZNO-ZNSE STRUCTURES, OBTAINED BY THE RADICAL BEAM GETTERING EPITAXY METHOD

The structure and photoluminescence (PL) of ZnO-ZnSe structures obtain ed by Radical Beam Gettering Epitaxy method on the implanted ZnSe subs trates has been investigated. It was found that the implantation of Zn + and Ar+ and the post-implantation annealing in the stream of atomic oxygen results in the appearance of an intense band with the maximum i n the range of 525-535 nm in the PL spectra. The centre responsible fo r this band is the complex centre including zinc vacancy. The interfac e boundary in the structure ZnO-ZnSe is sharp. The dimensions of the t ransient region are about 20 nm. The layers of zinc oxide are single c rystals according to the data from electronic microscopy. The annealin g of the samples implanted with oxygen at doses of 10(14)-10(15) cm(-2 ) results in the appearance of an intense band with a maximum at 560 n m in the PL spectra of ZnSe crystals. The implantation of O+ ions with a dose of 10(19) cm(-2) results in the formation of the ZnSe1-xOx sol id solution layer. The erbium PL spectra in the structures are depende nt, to a great extent, on the technological conditions of ZnSe crystal s annealing in the atomic oxygen stream.